SiC Device R&D

Advanced Power Semiconductor
Posted 244 days ago ·
  • Work Location
    Chengdu( 成都 ),
    Chinese Required
    No
    Experience Required
    2 Years
  • Qualification
    Bachelor Degree
    Salary (Monthly CNY)
    Negotiable
    Contract Type
    Full Time
  • Job Functions
    Engineering

SiC Device R&D

  • Responsible for SiC MOS and other devices chip design and development
  • Responsible for power semiconductor device new technology, new standards, new tools and new methods of research and development